View IXGH24N60CD1_663833.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HiPerFASTTM IGBT with Diode Lightspeed Series
Preliminary data
IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 600 600 20 30 48 24 80 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
C (TAB) G C E C = Collector, TAB = Collector
W C C C C
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 TO-268
1.13/10 Nm/lb.in. 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5.5 200 3 100 2.1 2.5 V V mA mA nA V
Features * International standard packages JEDEC TO-247 and surface mountable TO-268 * High frequency IGBT * High current handling capability * Latest generation HDMOSTM process * MOS Gate turn-on - drive simplicity * Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM Applications * PFC circuits * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers Advantages * High power density * Very fast switching speeds for high frequency applications
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 250 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98603A (4/99)
(c) 2000 IXYS All rights reserved
1-5
IXGH 24N60CD1 IXGT 24N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 17 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 40 55 IC = IC110, VGE = 15 V, VCE = 0.5 VCES 13 17 Inductive load, TJ = 25C IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC110, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 15 25 75 60 0.24 15 25 1 130 110 0.6 140 110 0.36 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W (TO-247) 0.25 K/W TO-268AA (D3 PAK)
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC110; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
1.5 2.49
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 2.5 6 100 25 V V A ns ns 0.9 K/W Min. Recommended Footprint
IF = IC110, VGE = 0 V, TJ = 150C Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C IF = IC110, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 100C TJ = 25C
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXGH 24N60CD1 IXGT 24N60CD1
50
TJ = 25C
200
VGE = 15V 13V
11V 9V TJ = 25C
VGE = 15V
40
160
13V
IC - Amperes
IC - Amperes
30 20
7V
120
11V
80
9V
10 0 0 1 2 3 4 5
40
7V
0
0
4
8
12
16
20
VCE - Volts
Fig. 1 Saturation Voltage Characteristics
VCE - Volts
Fig. 2 Extended Output Characteristics
50
TJ = 125C
1.4
VGE = 15V 13V
11V 9V
40
VCE (sat) - Normalized
VGE = 15V
IC = 48A
1.2
IC = 24A
IC - Amperes
30
7V
1.0
IC = 12A
20 10
5V
0.8
0 0 1 2 3 4 5
0.6
25
50
75
100
125
150
VCE - Volts
Fig. 3 Saturation Voltage Characteristics Fig.4
TJ - Degrees C
Temperature Dependence of VCE(sat)
50
VCE = 10V f = 1Mhz
30
TJ = 125C
Capacitance - pF
40
1000
Ciss
IC - Amperes
20
TJ = 25C
100
Coss
10 0 2 3 4 5 6 7 8 9 10 10 0 5 10 15 20
Crss
25
30
35
40
VGE - Volts
Fig. 5 Admittance Curves (c) 2000 IXYS All rights reserved
VCE-Volts Fig. 6 Temperature Dependence of VF & VF
3-5
IXGH 24N60CD1 IXGT 24N60CD1
1.00
TJ = 125C
2.0
RG = 10W
2.0
TJ = 125C E(OFF) IC =48A E(ON)
2.0
E(OFF) - milliJoules
E(ON) - millijoules
E(ON)
0.50
E(OFF)
E(ON) - millijoules
0.75
1.5
1.5
1.5
E(OFF) - millijoules
1.0
1.0
E(ON) IC = 24A E(OFF) IC = 12A E(OFF)
1.0
0.25
0.5
0.5
E(ON)
0.5
0.00
0 10 20 30 40
0.0 50
0.0
0.0
0
10
20
30
40
50
60
IC - Amperes
Fig.7. Dependence of EOFF and EOFF on IC
RG - Ohms Fig.8. Dependence of EOFF on RG
16
VCE = 300V IC = 24A
100
40
12
IC - Amperes
VGE - Volts
10
TJ = -55 to +125C
8
RG = 4.7W dV/dt < 5V/ns
1
4
0 0 20 40 60 80
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig.9. Gate Charge
Fig.10. Turn-off Safe Operating Area
1
D=0.5 D=0.2
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02
0.01
D=0.01 Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11 IGBT Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-5
IXGH 24N60CD1 IXGT 24N60CD1
60 A 50 IF 40 1000 nC 800 Qr
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30
600
TVJ=100C
20
400 10
TVJ=25C
10 0 0 1 2 VF 3V
200
5 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
0 100
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 14 Peak reverse current IRM versus -diF/dt
20
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 80
V VFR 15
TVJ= 100C IF = 30A V FR tfr
1.00 s tfr 0.75
I RM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 0 40 80 120 C 160 TVJ
60 0 200 400 600 -diF/dt 800 A/ms 1000
0 0 200 400
0.00 600 A/ms 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, and IRM versus TVJ temperature
1 K/W
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 ZthJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1 t
s
1
Fig. 18 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
5-5

▲Up To Search▲

Price & Availability of IXGH24N60CD1

	To Download IXGH24N60CD1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .